Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 3Ohm @ 10mA, 4V |
|---|---|
| Base Product Number | SSM5N16 |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 9.3 pF @ 3 V |
| Manufacturer | Toshiba Semiconductor and Storage |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Series | π-MOSVI |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±10V |
| Drain-to-Source Voltage | 20 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4V |
| Current - Continuous Drain (Id) @ 25°C | 100mA (Ta) |
| Max Power Dissipation | 200mW (Ta) |
| Package | Tape & Reel (TR) |
|---|---|
| Package / Case | 5-TSSOP, SC-70-5, SOT-353 |
| Supplier Device Package | 5-SSOP |
| Operating Temperature | 150°C(TJ) |
|---|