General
| Rds On (Max) @ Id, Vgs | 213mOhm @ 1A, 4V |
|---|---|
| FET Feature | Schottky Diode (Isolated) |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 6.4 nC @ 4 V |
| Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 10 V |
| Manufacturer | Toshiba Semiconductor and Storage |
| Mounting Type | Surface Mount |
| Product Status | Obsolete |
| Series | U-MOSIII |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±8V |
| Vgs(th) (Max) @ Id | 1V @ 1mA |