SSM3K116TU,LF

Toshiba Semiconductor and Storage

SSM3K116TU,LF

Datasheet

Analog & Power

MOSFET N-CH 30V 2.2A UFM

Active3-SMD, Flat LeadsAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs100mOhm @ 500mA, 4.5V
Base Product NumberSSM3K116
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds245 pF @ 10 V
ManufacturerToshiba Semiconductor and Storage
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
SeriesU-MOSIII
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id1.1V @ 100µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C2.2A (Ta)
Max Power Dissipation500mW (Ta)

Mechanical

Package / Case3-SMD, Flat Leads
Supplier Device PackageUFM

Environmental

Operating Temperature-55°C ~ 150°C (TJ)