Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 120mOhm @ 1.6A, 4V |
|---|---|
| Base Product Number | SSM3K01 |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 152 pF @ 10 V |
| Manufacturer | Toshiba Semiconductor and Storage |
| Mounting Type | Surface Mount |
| Product Status | Obsolete |
| Series | π-MOSVI |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±10V |
| Drain-to-Source Voltage | 30 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4V |
| Current - Continuous Drain (Id) @ 25°C | 3.2A (Ta) |
| Max Power Dissipation | 1.25W (Ta) |
| Package | Tape & Reel (TR) |
|---|---|
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | TSM |
| Operating Temperature | 150°C(TJ) |
|---|