Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 8Ohm @ 50mA, 4V |
|---|---|
| Base Product Number | SSM3J35 |
| FET Type | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 12.2 pF @ 3 V |
| Manufacturer | Toshiba Semiconductor and Storage |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Drain-to-Source Voltage | 20 V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 100mA (Ta) |
| Max Power Dissipation | 150mW (Ta) |
| Package | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | SOT-723 |
| Supplier Device Package | VESM |
| Operating Temperature | 150°C (TJ) |
|---|