Toshiba Semiconductor and Storage
SMOS LOW RON VDS:-60V VGSS:+10/
Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 1.55Ohm @ 200mA, 10V |
|---|---|
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 82 pF @ 10 V |
| Manufacturer | Toshiba Semiconductor and Storage |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Series | U-MOSVI |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | +10V, -20V |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Drain-to-Source Voltage | 60 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 400mA (Ta) |
| Max Power Dissipation | 600mW (Ta) |
| Package | Tape & Reel (TR) Cut Tape (CT) |
|---|
| Grade | Automotive |
|---|---|
| Operating Temperature | 150°C |
| Qualification | AEC-Q101 |