Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 12Ohm @ 10mA, 4V |
|---|---|
| Base Product Number | SSM3J15 |
| FET Type | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 9.1 pF @ 3 V |
| Manufacturer | Toshiba Semiconductor and Storage |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Series | π-MOSVI |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 1.7V @ 100µA |
| Drain-to-Source Voltage | 30 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4V |
| Current - Continuous Drain (Id) @ 25°C | 100mA (Ta) |
| Max Power Dissipation | 150mW (Ta) |
| Package | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | SOT-723 |
| Supplier Device Package | VESM |
| Operating Temperature | -55°C ~ 150°C (TJ) |
|---|