Toshiba Semiconductor and Storage
TRANS NPN/PNP PREBIAS 0.1W ES6
Structured electrical, mechanical and environmental parameters from imported product attributes.
| Base Product Number | RN4987 |
|---|---|
| Manufacturer | Toshiba Semiconductor and Storage |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
|---|---|
| Current - Collector (Ic) (Max) | 100mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Power - Max | 100mW |
| Frequency - Transition | 250MHz, 200MHz |
| Package | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | SOT-563, SOT-666 |
| Supplier Device Package | ES6 |