Toshiba Semiconductor and Storage
TRANS PREBIAS NPN 50V 0.8A SMINI
Structured electrical, mechanical and environmental parameters from imported product attributes.
| Base Product Number | RN1426 |
|---|---|
| Manufacturer | Toshiba Semiconductor and Storage |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Resistor - Base (R1) | 1 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 50mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
|---|---|
| Current - Collector (Ic) (Max) | 800 mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 90 @ 100mA, 1V |
| Power - Max | 200 mW |
| Frequency - Transition | 300 MHz |
| Package | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | S-Mini |