Toshiba Semiconductor and Storage
TRANS PREBIAS NPN 50V 0.1A VESM
Structured electrical, mechanical and environmental parameters from imported product attributes.
| Base Product Number | RN1108 |
|---|---|
| Manufacturer | Toshiba Semiconductor and Storage |
| Mounting Type | Surface Mount |
| Packaging | Tape & Reel (TR) Cut Tape (CT) |
| Part Status | Active |
| Resistor - Base (R1) | 22 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 5mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
|---|---|
| Current - Collector (Ic) (Max) | 100 mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Power - Max | 150 mW |
| Package / Case | SOT-723 |
|---|---|
| Supplier Device Package | VESM |