General
| Base Product Number | MT3S113 |
|---|---|
| Manufacturer | Toshiba Semiconductor and Storage |
| Mounting Type | Surface Mount |
| Noise Figure (dB Typ @ f) | 1.45dB @ 1GHz |
| Product Status | Active |
| Transistor Type | NPN |
Toshiba Semiconductor and Storage
MT3S113(TE85L,F)
DatasheetAnalog & Power
RF TRANS NPN 5.3V 12.5GHZ SMINI
Technical Specifications
Structured electrical, mechanical and environmental parameters from imported product attributes.
Electrical
| Voltage - Collector Emitter Breakdown (Max) | 5.3V |
|---|---|
| Current - Collector (Ic) (Max) | 100mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 30mA, 5V |
| Power - Max | 800mW |
| Frequency - Transition | 12.5GHz |
| Gain | 11.8dB |
Mechanical
| Package | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | S-Mini |
Environmental
| Operating Temperature | 150°C (TJ) |
|---|