General
| Base Product Number | MT3S111 |
|---|---|
| Manufacturer | Toshiba Semiconductor and Storage |
| Mounting Type | Surface Mount |
| Noise Figure (dB Typ @ f) | 1.25dB @ 1GHz |
| Product Status | Obsolete |
| Transistor Type | NPN |
Toshiba Semiconductor and Storage
MT3S111P(TE12L,F)
DatasheetAnalog & Power
RF TRANS NPN 6V 8GHZ PW-MINI
Technical Specifications
Structured electrical, mechanical and environmental parameters from imported product attributes.
Electrical
| Voltage - Collector Emitter Breakdown (Max) | 6V |
|---|---|
| Current - Collector (Ic) (Max) | 100mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 30mA, 5V |
| Power - Max | 1W |
| Frequency - Transition | 8GHz |
| Gain | 10.5dB |
Mechanical
| Package | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | TO-243AA |
| Supplier Device Package | PW-MINI |
Environmental
| Operating Temperature | 150°C (TJ) |
|---|