General
| Base Product Number | HN4B01 |
|---|---|
| Manufacturer | Toshiba Semiconductor and Storage |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Transistor Type | NPN, PNP (Emitter Coupled) |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA |
Toshiba Semiconductor and Storage
HN4B01JE(TE85L,F)
DatasheetAnalog & Power
TRANS NPN/PNP 50V 0.15A ESV PLN
Technical Specifications
Structured electrical, mechanical and environmental parameters from imported product attributes.
Electrical
| Voltage - Collector Emitter Breakdown (Max) | 50V |
|---|---|
| Current - Collector (Ic) (Max) | 150mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 2mA, 6V |
| Power - Max | 100mW |
| Frequency - Transition | 80MHz |
Mechanical
| Package | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | SOT-553 |
| Supplier Device Package | ESV |
Environmental
| Operating Temperature | 150°C (TJ) |
|---|