General
| Base Product Number | HN2S03 |
|---|---|
| Diode Configuration | 2 Independent |
| Manufacturer | Toshiba Semiconductor and Storage |
| Mounting Type | Surface Mount |
| Product Status | Obsolete |
| Technology | Schottky |
Technical Specifications
Structured electrical, mechanical and environmental parameters from imported product attributes.
Electrical
| Voltage - DC Reverse (Vr) (Max) | 20 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 550 mV @ 50 mA |
| Current - Average Rectified (Io) (per Diode) | 50mA |
| Current - Reverse Leakage @ Vr | 500 nA @ 20 V |
| Speed | Small Signal =< 200mA (Io), Any Speed |
Mechanical
| Package | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | 4-SMD, Flat Leads |
| Supplier Device Package | TESQ |
Environmental
| Operating Temperature - Junction | 125°C (Max) |
|---|