General
| Base Product Number | HN2S02 |
|---|---|
| Diode Configuration | 2 Independent |
| Manufacturer | Toshiba Semiconductor and Storage |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Technology | Schottky |
Toshiba Semiconductor and Storage
HN2S02JE(TE85L,F)
DatasheetAnalog & Power
DIODE ARR SCHOTT 40V 100MA ESV
Technical Specifications
Structured electrical, mechanical and environmental parameters from imported product attributes.
Electrical
| Voltage - DC Reverse (Vr) (Max) | 40 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 600 mV @ 100 mA |
| Current - Average Rectified (Io) (per Diode) | 100mA |
| Current - Reverse Leakage @ Vr | 5 µA @ 40 V |
| Speed | Small Signal =< 200mA (Io), Any Speed |
Mechanical
| Package | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | SOT-553 |
| Supplier Device Package | ESV |
Environmental
| Operating Temperature - Junction | 125°C (Max) |
|---|