General
| Base Product Number | HN1B01 |
|---|---|
| Manufacturer | Toshiba Semiconductor and Storage |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Transistor Type | NPN, PNP |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA |
Toshiba Semiconductor and Storage
HN1B01FU-GR,LF
DatasheetAnalog & Power
TRANS NPN/PNP 50V 0.15A US6-PLN
Technical Specifications
Structured electrical, mechanical and environmental parameters from imported product attributes.
Electrical
| Voltage - Collector Emitter Breakdown (Max) | 50V |
|---|---|
| Current - Collector (Ic) (Max) | 150mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 6V |
| Power - Max | 200mW, 210mW |
| Frequency - Transition | 150MHz |
Mechanical
| Package | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package | US6 |
Environmental
| Operating Temperature | 125°C (TJ) |
|---|