Structured electrical, mechanical and environmental parameters from imported product attributes.
| Base Product Number | GT60N321 |
|---|---|
| Input Type | Standard |
| Manufacturer | Toshiba Semiconductor and Storage |
| Mounting Type | Through Hole |
| Product Status | Obsolete |
| Reverse Recovery Time (trr) | 2.5 µs |
| Td (on/off) @ 25°C | 330ns/700ns |
| Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 60A |
| Voltage - Collector Emitter Breakdown (Max) | 1000 V |
|---|---|
| Current - Collector (Ic) (Max) | 60 A |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 170 W |
| Package | Tube |
|---|---|
| Package / Case | TO-3PL |
| Supplier Device Package | TO-3P(LH) |
| Operating Temperature | 150°C (TJ) |
|---|