GT50N322A

Toshiba Semiconductor and Storage

GT50N322A

Datasheet

Analog & Power

PB-F IGBT / TRANSISTOR TO-3PN IC

ActiveTO-3P-3, SC-65-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Input TypeStandard
ManufacturerToshiba Semiconductor and Storage
Mounting TypeThrough Hole
Product StatusActive
Reverse Recovery Time (trr)800 ns
Vce(on) (Max) @ Vge, Ic2.8V @ 15V, 60A

Electrical

Voltage - Collector Emitter Breakdown (Max)1000 V
Current - Collector (Ic) (Max)50 A
Current - Collector Pulsed (Icm)120 A
Power - Max156 W

Mechanical

PackageTray
Package / CaseTO-3P-3, SC-65-3
Supplier Device PackageTO-3P(N)

Environmental

Operating Temperature150°C (TJ)