General
| Input Type | Standard |
|---|---|
| Manufacturer | Toshiba Semiconductor and Storage |
| Mounting Type | Through Hole |
| Packaging | Tube |
| Part Status | Active |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 50A |
Toshiba Semiconductor and Storage
GT50JR22(STA1,E,S)
DatasheetAnalog & Power
PB-F IGBT / TRANSISTOR TO-3PN(OS
Technical Specifications
Structured electrical, mechanical and environmental parameters from imported product attributes.
Electrical
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
|---|---|
| Current - Collector (Ic) (Max) | 50 A |
| Current - Collector Pulsed (Icm) | 100 A |
| Power - Max | 230 W |
Mechanical
| Package / Case | TO-3P-3, SC-65-3 |
|---|---|
| Supplier Device Package | TO-3P(N) |
Environmental
| Operating Temperature | 175°C (TJ) |
|---|