GT50J121(Q)

Toshiba Semiconductor and Storage

GT50J121(Q)

Analog & Power

IGBT 600V 50A 240W TO3P LH

ObsoleteTO-3PLAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Base Product NumberGT50J121
Input TypeStandard
ManufacturerToshiba Semiconductor and Storage
Mounting TypeThrough Hole
Product StatusObsolete
Switching Energy1.3mJ (on), 1.34mJ (off)
Td (on/off) @ 25°C90ns/300ns
Test Condition300V, 50A, 13Ohm, 15V
Vce(on) (Max) @ Vge, Ic2.45V @ 15V, 50A

Electrical

Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector (Ic) (Max)50 A
Current - Collector Pulsed (Icm)100 A
Power - Max240 W

Mechanical

PackageTube
Package / CaseTO-3PL
Supplier Device PackageTO-3P(LH)

Environmental

Operating Temperature150°C (TJ)