GT40WR21,Q

Toshiba Semiconductor and Storage

GT40WR21,Q

Datasheet

Analog & Power

DISCRETE IGBT TRANSISTOR TO-3PN(

ActiveTO-3P-3, SC-65-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Input TypeStandard
ManufacturerToshiba Semiconductor and Storage
Mounting TypeThrough Hole
Product StatusActive
Vce(on) (Max) @ Vge, Ic5.9V @ 15V, 40A

Electrical

Voltage - Collector Emitter Breakdown (Max)1350 V
Current - Collector (Ic) (Max)40 A
Current - Collector Pulsed (Icm)80 A
Power - Max375 W

Mechanical

PackageTray
Package / CaseTO-3P-3, SC-65-3
Supplier Device PackageTO-3P(N)

Environmental

Operating Temperature175°C(TJ)