Toshiba Semiconductor and Storage
PB-F IGBT / TRANSISTOR TO-3PN IC
Structured electrical, mechanical and environmental parameters from imported product attributes.
| Base Product Number | GT40RR21 |
|---|---|
| Input Type | Standard |
| Manufacturer | Toshiba Semiconductor and Storage |
| Mounting Type | Through Hole |
| Product Status | Active |
| Reverse Recovery Time (trr) | 600 ns |
| Switching Energy | -, 540µJ (off) |
| Test Condition | 280V, 40A, 10Ohm, 20V |
| Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 40A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
|---|---|
| Current - Collector (Ic) (Max) | 40 A |
| Current - Collector Pulsed (Icm) | 200 A |
| Power - Max | 230 W |
| Package | Tube |
|---|---|
| Package / Case | TO-3P-3, SC-65-3 |
| Supplier Device Package | TO-3P(N) |
| Operating Temperature | 175°C(TJ) |
|---|