Toshiba Semiconductor and Storage
D-IGBT TO-247 VCES=1350V IC=30A
Structured electrical, mechanical and environmental parameters from imported product attributes.
| Gate Charge | 270 nC |
|---|---|
| Input Type | Standard |
| Manufacturer | Toshiba Semiconductor and Storage |
| Mounting Type | Through Hole |
| Product Status | Active |
| Switching Energy | -, 1.3mJ (off) |
| Test Condition | 300V, 60A, 39Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.6V @ 15V, 60A |
| Voltage - Collector Emitter Breakdown (Max) | 1350 V |
|---|---|
| Current - Collector (Ic) (Max) | 60 A |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 348 W |
| Package | Tube |
|---|---|
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247 |
| Operating Temperature | 175°C (TJ) |
|---|