GT30J121(Q)

Toshiba Semiconductor and Storage

GT30J121(Q)

Datasheet

Analog & Power

IGBT 600V 30A 170W TO3PN

ActiveTO-3P-3, SC-65-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Base Product NumberGT30J121
Input TypeStandard
ManufacturerToshiba Semiconductor and Storage
Mounting TypeThrough Hole
Product StatusActive
Switching Energy1mJ (on), 800µJ (off)
Td (on/off) @ 25°C90ns/300ns
Test Condition300V, 30A, 24Ohm, 15V
Vce(on) (Max) @ Vge, Ic2.45V @ 15V, 30A

Electrical

Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector (Ic) (Max)30 A
Current - Collector Pulsed (Icm)60 A
Power - Max170 W

Mechanical

PackageTube
Package / CaseTO-3P-3, SC-65-3
Supplier Device PackageTO-3P(N)