Toshiba Semiconductor and Storage
D-IGBT TO-247 VCES=1350V IC=40A
Structured electrical, mechanical and environmental parameters from imported product attributes.
| Gate Charge | 185 nC |
|---|---|
| Input Type | Standard |
| Manufacturer | Toshiba Semiconductor and Storage |
| Mounting Type | Through Hole |
| Product Status | Active |
| Switching Energy | -, 700µJ (off) |
| Test Condition | 300V, 40A, 39Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 40A |
| Voltage - Collector Emitter Breakdown (Max) | 1350 V |
|---|---|
| Current - Collector (Ic) (Max) | 40 A |
| Current - Collector Pulsed (Icm) | 80 A |
| Power - Max | 312 W |
| Package | Tube |
|---|---|
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247 |
| Operating Temperature | 175°C (TJ) |
|---|