GT10J312(Q)

Toshiba Semiconductor and Storage

GT10J312(Q)

Analog & Power

IGBT 600V 10A 60W TO220SM

ObsoleteTO-262-3 Long Leads, I²Pak, TO-262AAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Base Product NumberGT10J312
Input TypeStandard
ManufacturerToshiba Semiconductor and Storage
Mounting TypeThrough Hole
Product StatusObsolete
Reverse Recovery Time (trr)200 ns
Td (on/off) @ 25°C400ns/400ns
Test Condition300V, 10A, 100Ohm, 15V
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 10A

Electrical

Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector (Ic) (Max)10 A
Current - Collector Pulsed (Icm)20 A
Power - Max60 W

Mechanical

PackageTube
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

Environmental

Operating Temperature150°C (TJ)