General
| Base Product Number | CVJ10F30 |
|---|---|
| Diode Configuration | 2 Independent |
| Manufacturer | Toshiba Semiconductor and Storage |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Technology | Schottky |
Technical Specifications
Structured electrical, mechanical and environmental parameters from imported product attributes.
Electrical
| Voltage - DC Reverse (Vr) (Max) | 30 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 570 mV @ 1 A |
| Current - Average Rectified (Io) (per Diode) | 1A |
| Current - Reverse Leakage @ Vr | 50 µA @ 30 V |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Mechanical
| Package | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | 6-SMD (5 Leads), Flat Lead |
| Supplier Device Package | UFV |
Environmental
| Operating Temperature - Junction | 125°C (Max) |
|---|