General
| Base Product Number | CRS10I40 |
|---|---|
| Capacitance @ Vr, F | 35pF @ 10V, 1MHz |
| Manufacturer | Toshiba Semiconductor and Storage |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Technology | Standard |
Toshiba Semiconductor and Storage
CRS10I40A(TE85L,QM
DatasheetAnalog & Power
DIODE GEN PURP 40V 1A S-FLAT
Technical Specifications
Structured electrical, mechanical and environmental parameters from imported product attributes.
Electrical
| Voltage - DC Reverse (Vr) (Max) | 40 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 490 mV @ 700 mA |
| Current - Average Rectified (Io) | 1A |
| Current - Reverse Leakage @ Vr | 60 µA @ 40 V |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
Mechanical
| Package | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | SOD-123F |
| Supplier Device Package | S-FLAT (1.6x3.5) |
Environmental
| Operating Temperature - Junction | 150°C (Max) |
|---|