General
| Manufacturer | Toshiba Semiconductor and Storage |
|---|---|
| Mounting Type | Surface Mount |
| Product Status | Active |
| Reverse Recovery Time (trr) | 100 ns |
| Technology | Standard |
Toshiba Semiconductor and Storage
CRF03A,LQ(M
DatasheetAnalog & Power
DIODE GEN PURP 600V 700MA S-FLAT
Technical Specifications
Structured electrical, mechanical and environmental parameters from imported product attributes.
Electrical
| Voltage - DC Reverse (Vr) (Max) | 600 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 2 V @ 700 mA |
| Current - Average Rectified (Io) | 700mA |
| Current - Reverse Leakage @ Vr | 50 µA @ 600 V |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Mechanical
| Package | Box |
|---|---|
| Package / Case | SOD-123F |
| Supplier Device Package | S-FLAT (1.6x3.5) |
Environmental
| Operating Temperature - Junction | 150°C |
|---|