General
| Base Product Number | CMS30 |
|---|---|
| Capacitance @ Vr, F | 82pF @ 10V, 1MHz |
| Manufacturer | Toshiba Semiconductor and Storage |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Technology | Schottky |
Toshiba Semiconductor and Storage
CMS30I30A(TE12L,QM
DatasheetAnalog & Power
DIODE SCHOTTKY 30V 3A M-FLAT
Technical Specifications
Structured electrical, mechanical and environmental parameters from imported product attributes.
Electrical
| Voltage - DC Reverse (Vr) (Max) | 30 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 490 mV @ 3 A |
| Current - Average Rectified (Io) | 3A |
| Current - Reverse Leakage @ Vr | 100 µA @ 30 V |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Mechanical
| Package | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | SOD-128 |
| Supplier Device Package | M-FLAT (2.4x3.8) |
Environmental
| Operating Temperature - Junction | 150°C (Max) |
|---|