General
| Base Product Number | CMH01 |
|---|---|
| Manufacturer | Toshiba Semiconductor and Storage |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Reverse Recovery Time (trr) | 100 ns |
| Technology | Standard |
Toshiba Semiconductor and Storage
CMH01(TE12L,Q,M)
DatasheetAnalog & Power
DIODE GEN PURP 200V 3A M-FLAT
Technical Specifications
Structured electrical, mechanical and environmental parameters from imported product attributes.
Electrical
| Voltage - DC Reverse (Vr) (Max) | 200 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 980 mV @ 3 A |
| Current - Average Rectified (Io) | 3A |
| Current - Reverse Leakage @ Vr | 10 µA @ 200 V |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Mechanical
| Package | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | SOD-128 |
| Supplier Device Package | M-FLAT (2.4x3.8) |
Environmental
| Operating Temperature - Junction | -40°C ~ 150°C |
|---|