BAS316,H3F

Toshiba Semiconductor and Storage

BAS316,H3F

Datasheet

Analog & Power

DIODE GEN PURP 100V 250MA USC

ActiveSC-76, SOD-323Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Base Product NumberBAS316
Capacitance @ Vr, F0.35pF @ 0V, 1MHz
ManufacturerToshiba Semiconductor and Storage
Mounting TypeSurface Mount
Product StatusActive
Reverse Recovery Time (trr)3 ns
TechnologyStandard

Electrical

Voltage - DC Reverse (Vr) (Max)100 V
Voltage - Forward (Vf) (Max) @ If1.25 V @ 150 mA
Current - Average Rectified (Io)250mA
Current - Reverse Leakage @ Vr200 nA @ 80 V
SpeedFast Recovery =< 500ns, > 200mA (Io)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseSC-76, SOD-323
Supplier Device PackageUSC

Environmental

Operating Temperature - Junction150°C (Max)