2SK3700(F)

Name: 2SK3700(F)
Brand: Toshiba Semiconductor and Storage

Analog & Power

MOSFET N-CH 900V 5A TO3P

ActiveTO-3P-3, SC-65-3Analog & Power

Structured electrical, mechanical and environmental parameters from imported product attributes.

Rds On (Max) @ Id, Vgs	2.5Ohm @ 3A, 10V
Base Product Number	2SK3700
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1150 pF @ 25 V
Manufacturer	Toshiba Semiconductor and Storage
Mounting Type	Through Hole
Product Status	Active
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	4V @ 1mA

Drain-to-Source Voltage	900 V
Current - Continuous Drain (Id) @ 25°C	5A (Ta)
Max Power Dissipation	150W (Tc)

Operating Temperature	150°C(TJ)