2SK2917(F)

Name: 2SK2917(F)
Brand: Toshiba Semiconductor and Storage

Analog & Power

MOSFET N-CH 500V 18A TO3PIS

ObsoleteTO-3P-3, SC-65-3Analog & Power

Structured electrical, mechanical and environmental parameters from imported product attributes.

Rds On (Max) @ Id, Vgs	270mOhm @ 10A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	3720 pF @ 10 V
Manufacturer	Toshiba Semiconductor and Storage
Mounting Type	Through Hole
Packaging	Tube
Part Status	Obsolete
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±30V
Vgs(th) (Max) @ Id	4V @ 1mA

Drain-to-Source Voltage	500 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	18A (Ta)
Max Power Dissipation	90W (Tc)

Package / Case	TO-3P-3, SC-65-3
Supplier Device Package	TO-3P(N)IS

Operating Temperature	150°C (TJ)