General
| Base Product Number | 2SD2406 |
|---|---|
| Manufacturer | Toshiba Semiconductor and Storage |
| Mounting Type | Through Hole |
| Product Status | Obsolete |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 300mA, 3A |
Technical Specifications
Structured electrical, mechanical and environmental parameters from imported product attributes.
Electrical
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
|---|---|
| Current - Collector (Ic) (Max) | 4 A |
| Current - Collector Cutoff (Max) | 30µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 500mA, 5V |
| Power - Max | 25 W |
| Frequency - Transition | 8MHz |
Mechanical
| Package | Tube |
|---|---|
| Package / Case | TO-220-3 Full Pack |
| Supplier Device Package | TO-220NIS |
Environmental
| Operating Temperature | 150°C (TJ) |
|---|