2SD1221-Y(Q)

Toshiba Semiconductor and Storage

2SD1221-Y(Q)

Analog & Power

TRANS NPN 60V 3A PW-MOLD

ObsoleteTO-252-3, DPak (2 Leads + Tab), SC-63Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Base Product Number2SD1221
ManufacturerToshiba Semiconductor and Storage
Mounting TypeSurface Mount
Product StatusObsolete
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic1V @ 300mA, 3A

Electrical

Voltage - Collector Emitter Breakdown (Max)60 V
Current - Collector (Ic) (Max)3 A
Current - Collector Cutoff (Max)100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 500mA, 5V
Power - Max1 W
Frequency - Transition3MHz

Mechanical

PackageBulk
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackagePW-MOLD

Environmental

Operating Temperature150°C (TJ)