General
| Manufacturer | Toshiba Semiconductor and Storage |
|---|---|
| Mounting Type | Through Hole |
| Product Status | Active |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 900mV @ 100mA, 800mA |
Technical Specifications
Structured electrical, mechanical and environmental parameters from imported product attributes.
Electrical
| Voltage - Collector Emitter Breakdown (Max) | 375 V |
|---|---|
| Current - Collector (Ic) (Max) | 1.5 A |
| Current - Collector Cutoff (Max) | 50µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA, 5V |
| Power - Max | 1.1 W |
Mechanical
| Package | Box |
|---|---|
| Package / Case | TO-251-3 Stub Leads, IPak |
| Supplier Device Package | PW-MOLD2 |
Environmental
| Operating Temperature | 150°C (TJ) |
|---|