General
| Manufacturer | Toshiba Semiconductor and Storage |
|---|---|
| Mounting Type | Surface Mount |
| Product Status | Active |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 120mV @ 10mA, 500mA |
Toshiba Semiconductor and Storage
2SC5819(TE12L,ZF)
DatasheetAnalog & Power
TRANS NPN 20V 1.5A PW-MINI
Technical Specifications
Structured electrical, mechanical and environmental parameters from imported product attributes.
Electrical
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
|---|---|
| Current - Collector (Ic) (Max) | 1.5 A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 400 @ 150mA, 2V |
| Power - Max | 1 W |
Mechanical
| Package | Box |
|---|---|
| Package / Case | TO-243AA |
| Supplier Device Package | PW-MINI |
Environmental
| Operating Temperature | 150°C (TJ) |
|---|