General
| Base Product Number | 2SC5200 |
|---|---|
| Manufacturer | Toshiba Semiconductor and Storage |
| Mounting Type | Through Hole |
| Product Status | Active |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 800mA, 8A |
Technical Specifications
Structured electrical, mechanical and environmental parameters from imported product attributes.
Electrical
| Voltage - Collector Emitter Breakdown (Max) | 230 V |
|---|---|
| Current - Collector (Ic) (Max) | 15 A |
| Current - Collector Cutoff (Max) | 5µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 1A, 5V |
| Power - Max | 150 W |
| Frequency - Transition | 30MHz |
Mechanical
| Package | Tube |
|---|---|
| Package / Case | TO-3P-3, SC-65-3 |
| Supplier Device Package | TO-3P(N) |
Environmental
| Operating Temperature | 150°C (TJ) |
|---|