General
| Manufacturer | Toshiba Semiconductor and Storage |
|---|---|
| Mounting Type | Surface Mount |
| Product Status | Active |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 10mA, 100mA |
Toshiba Semiconductor and Storage
2SA1971(TE12L,F)
DatasheetAnalog & Power
PB-FREE POWER TRANSISTOR PW-MINI
Technical Specifications
Structured electrical, mechanical and environmental parameters from imported product attributes.
Electrical
| Voltage - Collector Emitter Breakdown (Max) | 400 V |
|---|---|
| Current - Collector (Ic) (Max) | 500 mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 140 @ 100mA, 5V |
| Power - Max | 500 mW |
| Frequency - Transition | 35MHz |
Mechanical
| Package | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | TO-243AA |
| Supplier Device Package | PW-MINI |
Environmental
| Operating Temperature | 150°C (TJ) |
|---|