General
| Base Product Number | 1SS307 |
|---|---|
| Capacitance @ Vr, F | 6pF @ 0V, 1MHz |
| Manufacturer | Toshiba Semiconductor and Storage |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Technology | Standard |
Toshiba Semiconductor and Storage
1SS307(TE85L,F)
DatasheetAnalog & Power
DIODE GEN PURP 30V 100MA S-MINI
Technical Specifications
Structured electrical, mechanical and environmental parameters from imported product attributes.
Electrical
| Voltage - DC Reverse (Vr) (Max) | 30 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 100 mA |
| Current - Average Rectified (Io) | 100mA |
| Current - Reverse Leakage @ Vr | 10 nA @ 30 V |
| Speed | Small Signal =< 200mA (Io), Any Speed |
Mechanical
| Package | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | S-Mini |
Environmental
| Operating Temperature - Junction | 125°C (Max) |
|---|