1SS250(TE85L,F)

Toshiba Semiconductor and Storage

1SS250(TE85L,F)

Analog & Power

DIODE GEN PURP 200V 100MA SC59

DiscontinuedTO-236-3, SC-59, SOT-23-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Base Product Number1SS250
Capacitance @ Vr, F3pF @ 0V, 1MHz
ManufacturerToshiba Semiconductor and Storage
Mounting TypeSurface Mount
Product StatusNot For New Designs
Reverse Recovery Time (trr)60 ns
TechnologyStandard

Electrical

Voltage - DC Reverse (Vr) (Max)200 V
Voltage - Forward (Vf) (Max) @ If1.2 V @ 100 mA
Current - Average Rectified (Io)100mA
Current - Reverse Leakage @ Vr1 µA @ 200 V
SpeedSmall Signal =< 200mA (Io), Any Speed

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSC-59

Environmental

Operating Temperature - Junction125°C (Max)