CSD87312Q3E

Texas Instruments

CSD87312Q3E

Datasheet

Analog & Power

MOSFET 2N-CH 30V 27A 8VSON

Active8-PowerTDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs33mOhm @ 7A , 8V
Base Product NumberCSD87312Q3
Configuration2 N-Channel (Dual) Common Source
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs8.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds1250pF @ 15V
ManufacturerTexas Instruments
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
SeriesNexFET™
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.3V @ 250µA

Electrical

Drain-to-Source Voltage30V
Current - Continuous Drain (Id) @ 25°C27A
Power - Max2.5W

Mechanical

Package / Case8-PowerTDFN
Supplier Device Package8-VSON (3.3x3.3)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)