CSD86360Q5D

Texas Instruments

CSD86360Q5D

Datasheet

Analog & Power

MOSFET 2N-CH 25V 50A 8LSON

Active8-PowerLDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Base Product NumberCSD86360Q5
Configuration2 N-Channel (Half Bridge)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs12.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds2060pF @ 12.5
ManufacturerTexas Instruments
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
SeriesNexFET™
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.1V @ 250µA

Electrical

Drain-to-Source Voltage25V
Current - Continuous Drain (Id) @ 25°C50A
Power - Max13W

Mechanical

Package / Case8-PowerLDFN
Supplier Device Package8-LSON (5x6)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)