CSD86356Q5D

Texas Instruments

CSD86356Q5D

Datasheet

Analog & Power

MOSFET 2N-CH 25V 40A 8VSON-CLIP

Active8-PowerTDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs4.5mOhm @ 20A, 5V, 0.8mOhm @ 20A, 5V
Base Product NumberCSD86356
Configuration2 N-Channel (Half Bridge)
FET FeatureLogic Level Gate, 5V Drive
Gate Charge (Qg) (Max) @ Vgs7.9nC @ 4.5V, 19.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds1040pF @ 12.5V, 2510pF @ 12.5V
ManufacturerTexas Instruments
Mounting TypeSurface Mount
Product StatusActive
SeriesNexFET™
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.85V @ 250µA, 1.5V @ 250µA

Electrical

Drain-to-Source Voltage25V
Current - Continuous Drain (Id) @ 25°C40A (Ta)
Power - Max12W (Ta)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-PowerTDFN
Supplier Device Package8-VSON-CLIP (5x6)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)