CSD25301W1015

Texas Instruments

CSD25301W1015

Analog & Power

MOSFET P-CH 20V 2.2A 6DSBGA

Obsolete6-UFBGA, DSBGAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs75mOhm @ 1A, 4.5V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs2.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds270 pF @ 10 V
ManufacturerTexas Instruments
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusObsolete
SeriesNexFET™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id1V @ 250µA

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C2.2A (Tc)
Max Power Dissipation1.5W (Ta)

Mechanical

Package / Case6-UFBGA, DSBGA
Supplier Device Package6-DSBGA (1x1.5)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)