Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 26mOhm @ 2A, 4.5V |
|---|---|
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 7.5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1010 pF @ 10 V |
| Manufacturer | Texas Instruments |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Series | NexFET™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | -6V |
| Vgs(th) (Max) @ Id | 1.05V @ 250µA |
| Drain-to-Source Voltage | 20 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
| Max Power Dissipation | 500mW (Ta) |
| Package | Tape & Reel (TR) |
|---|---|
| Package / Case | 9-UFBGA, DSBGA |
| Supplier Device Package | 9-DSBGA |
| Operating Temperature | -55°C~150°C(TJ) |
|---|