CSD23382F4

Texas Instruments

CSD23382F4

Datasheet

Analog & Power

MOSFET P-CH 12V 3.5A 3PICOSTAR

Active3-XFDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs76mOhm @ 500mA, 4.5V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs1.35 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds235 pF @ 6 V
ManufacturerTexas Instruments
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
SeriesFemtoFET™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id1.1V @ 250µA

Electrical

Drain-to-Source Voltage12 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C3.5A (Ta)
Max Power Dissipation500mW (Ta)

Mechanical

Package / Case3-XFDFN
Supplier Device Package3-PICOSTAR

Environmental

Operating Temperature-55°C ~ 150°C (TJ)