CSD23201W10

Texas Instruments

CSD23201W10

Analog & Power

MOSFET P-CH 12V 2.2A 4DSBGA

Obsolete4-UFBGA, DSBGAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs82mOhm @ 500mA, 4.5V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs2.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds325 pF @ 6 V
ManufacturerTexas Instruments
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusObsolete
SeriesNexFET™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)-6V
Vgs(th) (Max) @ Id1V @ 250µA

Electrical

Drain-to-Source Voltage12 V
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C2.2A (Tc)
Max Power Dissipation1W (Ta)

Mechanical

Package / Case4-UFBGA, DSBGA
Supplier Device Package4-DSBGA (1x1)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)