CSD22206W

Texas Instruments

CSD22206W

Datasheet

Analog & Power

MOSFET P-CH 8V 5A 9DSBGA

Active9-UFBGA, DSBGAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs5.7mOhm @ 2A, 4.5V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs14.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds2275 pF @ 4 V
ManufacturerTexas Instruments
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)-6V
Vgs(th) (Max) @ Id1.05V @ 250µA

Electrical

Drain-to-Source Voltage8 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C5A (Ta)
Max Power Dissipation1.7W (Ta)

Mechanical

Package / Case9-UFBGA, DSBGA
Supplier Device Package9-DSBGA

Environmental

Operating Temperature-55°C ~ 150°C (TJ)